BSS123 transistor equivalent, n-channel logic level enhancement mode field effect transistor.
* 0.17 A, 100 V. RDS(ON) = 6Ω @ VGS = 10 V RDS(ON) = 10Ω @ VGS = 4.5 V
* High density cell design for extremely low RDS(ON)
* Rugged and Reliable
* Compac.
such as small servo motor control, power MOSFET gate drivers, and other switching applications.
Features
* 0.17 A, .
Image gallery
Download